![Analoge Mikrochips und Packaging-Systeme Analoge Mikrochips und Packaging-Systeme]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/analog-rf-power-mems-sensors-microscopy-solutions.jpg/_jcr_content/renditions/original.image_file.100.100.240,0,1680,1440.file/analog-rf-power-mems-sensors-microscopy-solutions.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/analog-rf-power-mems-sensors-microscopy-solutions.jpg/_jcr_content/renditions/original.image_file.360.360.240,0,1680,1440.file/analog-rf-power-mems-sensors-microscopy-solutions.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/analog-rf-power-mems-sensors-microscopy-solutions.jpg/_jcr_content/renditions/original.image_file.768.768.240,0,1680,1440.file/analog-rf-power-mems-sensors-microscopy-solutions.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/analog-rf-power-mems-sensors-microscopy-solutions.jpg/_jcr_content/renditions/original.image_file.1024.1024.240,0,1680,1440.file/analog-rf-power-mems-sensors-microscopy-solutions.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/analog-rf-power-mems-sensors-microscopy-solutions.jpg/_jcr_content/renditions/original.image_file.1280.1280.240,0,1680,1440.file/analog-rf-power-mems-sensors-microscopy-solutions.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/analog-rf-power-mems-sensors-microscopy-solutions.jpg/_jcr_content/renditions/original.image_file.1440.1440.240,0,1680,1440.file/analog-rf-power-mems-sensors-microscopy-solutions.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/analog-rf-power-mems-sensors-microscopy-solutions.jpg/_jcr_content/renditions/original.image_file.1440.1440.240,0,1680,1440.file/analog-rf-power-mems-sensors-microscopy-solutions.jpg"})
Erweiterte Analysen für komplexe neuartige Materialien und Strukturen
Kürzere Time-to-Market durch akkurate Fehleranalyse
Mobilfunk, das Internet der Dinge (IoT), Cloud Computing und die Elektrifizierung der Automobilindustrie erzeugen eine immense Nachfrage nach hochleistungsfähigen „More than Moore“-Halbleiterkomponenten, mit neuartigen Materialien und Prozessen, neuen Siliziumarchitekturen und Packaging-Technologien wie den mikroelektromechanischen Systemen (MEMS). Materialien mit direkter oder breiter Bandlücke wie Galliumarsenid (GaAs), Siliziumkarbid (SiC) und Galliumnitrid (GaN) stellen Hersteller von Geräten und Komponenten gleichermaßen vor neue Herausforderungen. Viele dieser Komponenten nutzen nach wie vor auch herkömmliche integrierte Schaltkreise (IC), was die Anforderungen an Herstellung und Packaging weiter erhöht.
Um den Entwicklungszyklus und die Time-to-Market dieser anspruchsvollen Bauteile zu beschleunigen, benötigen Hersteller modernste Analysetools, die komplexe Integrationen neuer Materialien und Fehlerursachen-Analysen unterstützen.
![IGBT-Querschnitt und EDX-Elementverteilungsbild IGBT-Querschnitt und EDX-Elementverteilungsbild]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg/_jcr_content/renditions/original.image_file.100.100.0,0,1920,1920.file/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg/_jcr_content/renditions/original.image_file.360.360.0,0,1920,1920.file/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg/_jcr_content/renditions/original.image_file.768.768.0,0,1920,1920.file/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg/_jcr_content/renditions/original.image_file.1024.1024.0,0,1920,1920.file/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg/_jcr_content/renditions/original.image_file.1280.1280.0,0,1920,1920.file/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg/_jcr_content/renditions/original.image_file.1440.1440.0,0,1920,1920.file/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg/_jcr_content/renditions/original.image_file.1920.1920.0,0,1920,1920.file/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg"})
Querschnitt und EDX eines IGBT
![IGBT-Querschnitt und EDX-Elementverteilungsbild IGBT-Querschnitt und EDX-Elementverteilungsbild]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg/_jcr_content/renditions/original.image_file.100.100.file/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg/_jcr_content/renditions/original.image_file.360.360.file/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg/_jcr_content/renditions/original.image_file.768.768.file/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg/_jcr_content/renditions/original.image_file.1024.1023.file/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg/_jcr_content/renditions/original.image_file.1280.1279.file/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg/_jcr_content/renditions/original.image_file.1440.1439.file/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg/_jcr_content/renditions/original./insulated-gate-bipolar-transistor-cross-section-and-edx-map-fib-sem.jpg"})
Querschnitt und EDX eines IGBT
Untersuchung der Grenzschicht eines Gates in einem Bipolartransistor mit isolierter Steuerelektrode (Insulated Gate Bipolar Transistor, IGBT). Die gesamte Querschnitt- und EDX-Elementaranalyse wurde mit einem ZEISS Crossbeam 550 FIB-SEM durchgeführt. Das STEM-in-SEM-Bild (Hellfeld, 30 kV) einer Lamelle zeigt in Kombination mit dem EDX-Elementverteilungsbild in Crossbeam kristalline Si-Ausfällungen.
![SiC-MOSFET-Dotierungsprofil SiC-MOSFET-Dotierungsprofil]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original.image_file.100.75.0,0,1917,1439.file/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original.image_file.360.270.0,0,1917,1439.file/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original.image_file.768.576.0,0,1917,1439.file/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original.image_file.1024.768.0,0,1917,1439.file/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original.image_file.1280.960.0,0,1917,1439.file/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original.image_file.1440.1080.0,0,1917,1439.file/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original.image_file.1917.1438.0,0,1917,1439.file/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg"})
Aufnahme des Dotierungsprofils eines SiC-MOFSET
![SiC-MOSFET-Dotierungsprofil SiC-MOSFET-Dotierungsprofil]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original.image_file.100.75.file/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original.image_file.360.270.file/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original.image_file.768.576.file/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original.image_file.1024.768.file/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original.image_file.1280.960.file/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original./silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg"})
Aufnahme des Dotierungsprofils eines SiC-MOFSET
Gespaltenes SiC-MOSFET-Bauteil, aufgenommen bei 1,5 kV mit einem ZEISS Crossbeam FIB-SEM. Die Aufnahme hebt die unterschiedlich dotierten Bereiche hervor, die auf die unterschiedlichen Arbeitsfunktionen zurückgehen. Das dunkle Band, das sich unterhalb und auf beide Seiten des Gates erstreckt, zeigt die n+-Diffusion. Die helle Zone zeigt den Bereich des p-Typ-Körpers. Diese Technik gibt Aufschluss über den Zustand und die Lokalisation der Sperrschicht.
3D‑Röntgen-Imaging der Hauptplatine eines Smartphones im Nanobereich
![3D-Bild eines Beschleunigungssensors (MEMS) 3D-Bild eines Beschleunigungssensors (MEMS)]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.file/smartphone-gyroscope-mems-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.file/smartphone-gyroscope-mems-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.file/smartphone-gyroscope-mems-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/smartphone-gyroscope-mems-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/smartphone-gyroscope-mems-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/smartphone-gyroscope-mems-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-3d-xrm.jpg/_jcr_content/renditions/original./smartphone-gyroscope-mems-3d-xrm.jpg"})
3D‑Analyse des Gyroskops/Beschleunigungssensors eines Smartphones
![3D-Bild eines Beschleunigungssensors (MEMS) 3D-Bild eines Beschleunigungssensors (MEMS)]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.file/smartphone-gyroscope-mems-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.file/smartphone-gyroscope-mems-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.file/smartphone-gyroscope-mems-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/smartphone-gyroscope-mems-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/smartphone-gyroscope-mems-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/smartphone-gyroscope-mems-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-3d-xrm.jpg/_jcr_content/renditions/original./smartphone-gyroscope-mems-3d-xrm.jpg"})
3D‑Analyse des Gyroskops/Beschleunigungssensors eines Smartphones
3D‑Röntgen-Rekonstruktion der Silizium-Mikrokamm-Strukturen, Auflösung: 1 µm/Voxel.
Aufgenommen mit ZEISS Xradia Versa-Röntgenmikroskop
![Draufsicht auf den MEMS-Beschleunigungssensor, mit schmaler Kammstruktur Draufsicht auf den MEMS-Beschleunigungssensor, mit schmaler Kammstruktur]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.100.100.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.360.360.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.768.768.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg/_jcr_content/renditions/original./smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg"})
Hochauflösende Aufnahme feiner Kammzähne
![Draufsicht auf den MEMS-Beschleunigungssensor, mit schmaler Kammstruktur Draufsicht auf den MEMS-Beschleunigungssensor, mit schmaler Kammstruktur]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.100.100.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.360.360.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.768.768.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg/_jcr_content/renditions/original./smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-plan-view.jpg"})
Hochauflösende Aufnahme feiner Kammzähne
Virtuelle Draufsicht derselben Analyse mit feinen Kammzähnen, Auflösung: 0,3 µm/Voxel.
Aufgenommen mit ZEISS Xradia Versa-Röntgenmikroskop
![MEMS-Beschleunigungssensor, Querschnitt der schmalen Kammstruktur MEMS-Beschleunigungssensor, Querschnitt der schmalen Kammstruktur]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.100.100.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.360.360.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.768.768.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg/_jcr_content/renditions/original./smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg"})
Virtueller Schnitt der Kammzähne
![MEMS-Beschleunigungssensor, Querschnitt der schmalen Kammstruktur MEMS-Beschleunigungssensor, Querschnitt der schmalen Kammstruktur]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.100.100.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.360.360.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.768.768.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg/_jcr_content/renditions/original./smartphone-gyroscope-mems-fine-comb-fins-3d-xrm-cross-section.jpg"})
Virtueller Schnitt der Kammzähne
Virtueller Querschnitt derselben Probe mit detaillierter Abbildung der 2,1 µm feinen Kammzähne, Auflösung: 0,3 µm/Voxel.
Aufgenommen mit ZEISS Xradia Versa-Röntgenmikroskop
Zerstörungsfreie Analysen für System, Packaging und Schaltungen
![3D‑Röntgenbild eines Smartphones 3D‑Röntgenbild eines Smartphones]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-3d-xrm-image.jpg/_jcr_content/renditions/original.image_file.100.100.240,0,1680,1440.file/smartphone-3d-xrm-image.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-3d-xrm-image.jpg/_jcr_content/renditions/original.image_file.360.360.240,0,1680,1440.file/smartphone-3d-xrm-image.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-3d-xrm-image.jpg/_jcr_content/renditions/original.image_file.768.768.240,0,1680,1440.file/smartphone-3d-xrm-image.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-3d-xrm-image.jpg/_jcr_content/renditions/original.image_file.1024.1024.240,0,1680,1440.file/smartphone-3d-xrm-image.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-3d-xrm-image.jpg/_jcr_content/renditions/original.image_file.1280.1280.240,0,1680,1440.file/smartphone-3d-xrm-image.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-3d-xrm-image.jpg/_jcr_content/renditions/original.image_file.1440.1440.240,0,1680,1440.file/smartphone-3d-xrm-image.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-3d-xrm-image.jpg/_jcr_content/renditions/original.image_file.1440.1440.240,0,1680,1440.file/smartphone-3d-xrm-image.jpg"})
Smartphone
![3D‑Röntgenbild eines Smartphones 3D‑Röntgenbild eines Smartphones]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-3d-xrm-image.jpg/_jcr_content/renditions/original.image_file.100.75.file/smartphone-3d-xrm-image.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-3d-xrm-image.jpg/_jcr_content/renditions/original.image_file.360.270.file/smartphone-3d-xrm-image.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-3d-xrm-image.jpg/_jcr_content/renditions/original.image_file.768.576.file/smartphone-3d-xrm-image.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-3d-xrm-image.jpg/_jcr_content/renditions/original.image_file.1024.768.file/smartphone-3d-xrm-image.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-3d-xrm-image.jpg/_jcr_content/renditions/original.image_file.1280.960.file/smartphone-3d-xrm-image.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-3d-xrm-image.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/smartphone-3d-xrm-image.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-3d-xrm-image.jpg/_jcr_content/renditions/original./smartphone-3d-xrm-image.jpg"})
Smartphone
3D‑Röntgenabbildung eines kompletten Smartphones, Auflösung: 50 µm/Voxel.
Aufgenommen mit ZEISS Xradia Context microCT
![PMIC‑Package, virtuelle Draufsicht PMIC‑Package, virtuelle Draufsicht]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.100.100.482,0,1921,1439.file/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.360.360.482,0,1921,1439.file/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.768.768.482,0,1921,1439.file/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.1024.1024.482,0,1921,1439.file/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.1280.1280.482,0,1921,1439.file/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.1439.1439.482,0,1921,1439.file/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.1439.1439.482,0,1921,1439.file/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg"})
Power Management IC Package
![PMIC‑Package, virtuelle Draufsicht PMIC‑Package, virtuelle Draufsicht]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.100.75.file/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.360.270.file/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.768.576.file/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.1024.768.file/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.1280.960.file/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-package-3d-xrm-plan-view.jpg/_jcr_content/renditions/original./smartphone-power-management-ic-package-3d-xrm-plan-view.jpg"})
Power Management IC Package
Virtuelle Draufsicht eines Power Management Integrated Circuit Package (PMIC), Auflösung: 11 µm/Voxel.
Aufgenommen mit ZEISS Xradia Context microCT
![Querschnitt der PMIC‑Package-Schaltungen Querschnitt der PMIC‑Package-Schaltungen]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.100.100.482,0,1921,1439.file/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.360.360.482,0,1921,1439.file/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.768.768.482,0,1921,1439.file/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.1024.1024.482,0,1921,1439.file/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.1280.1280.482,0,1921,1439.file/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.1439.1439.482,0,1921,1439.file/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.1439.1439.482,0,1921,1439.file/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg"})
PMIC-Schaltungen
![Querschnitt der PMIC‑Package-Schaltungen Querschnitt der PMIC‑Package-Schaltungen]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.100.75.file/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.360.270.file/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.768.576.file/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.1024.768.file/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.1280.960.file/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg/_jcr_content/renditions/original./smartphone-power-management-ic-interconnects-3d-xrm-cross-section.jpg"})
Querschnitt der PMIC-Schaltungen
Virtueller Querschnitt der Lotbumps und Vias des PMIC, Auflösung: 2,1 µm/Voxel.
Aufgenommen mit der einzigartigen „Resolution at a Distance“ des ZEISS Xradia Versa-Röntgenmikroskops
EBAC eines analogen Chips
Untersuchung eines digitalen Zählchips mit einer Nanosonde im GeminiSEM bei 20 kV. Die EBAC-Abbildung (Elektronenstrahl getriggerter Absorptionsstrom-Kontrast oder Widerstandskontrast) enthält Informationen zu den Verbindungen der Verdrahtung unter der Oberfläche und den verborgenen p‑n-Übergängen.