Advanced Microscopy for Electronic Materials & Semiconductor Packages

Ga focused ion beams are cost effective and highly versatile: powerful enough today to polish a few hundred microns area, yet precise enough for 10 nm thick lamella preparation or 3D tomography with <5 nm isotropic voxel resolution. High quality fs-laser processing requires only minor FIB polishing at low currents, where a Ga beam has 35 times greater current density than a PFIB. This makes a Ga FIB the most effective technology for the broadest range of applications.

The LaserFIB enables things that could never be done before, leading to higher productivity and new applications. Do you want 2X faster atom probe prep with higher sample quality than normal? Do you need to locate and image rare defects randomly distributed within a large volume? Do you need multiscale and multimodal analysis at timescales that enable statistical sampling for new material development? How about receiving large-area analytical results at unheard of speeds? This is just a small sampling of the new capabilities.

There is growing need for material and device characterization across length scales in microelectronics, battery research, and other industries. This includes a need to accurately perform nanoscale analysis, at site-specific regions contained within mm volumes of material, at faster rates than classical Ga and plasma FIB (PFIB) technologies allow.

The LaserFIB architecture provides laser processing under vacuum conditions tailored for best quality, enabling rapid SEM imaging and visual feedback for process set-up and optimization. Laser integration enables automation and high productivity, while conserving floor space and cost of ownership.