![逻辑和存储 逻辑和存储]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original.image_file.100.100.file/advanced-semiconductor-packaging-microscopy-solutions.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original.image_file.360.360.file/advanced-semiconductor-packaging-microscopy-solutions.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original.image_file.768.768.file/advanced-semiconductor-packaging-microscopy-solutions.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/advanced-semiconductor-packaging-microscopy-solutions.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original./advanced-semiconductor-packaging-microscopy-solutions.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original./advanced-semiconductor-packaging-microscopy-solutions.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original./advanced-semiconductor-packaging-microscopy-solutions.jpg"})
先进的封装和三维异构集成
通过亚微米成像和分析提高生产率
对于当今的半导体器件,单靠晶体管缩放已不足以提高性能并实现系统小型化。半导体封装的创新,例如使用硅通孔(TSV)的新型2.5D/3D设计和使用混合键合的小芯片,可实现系统级封装(SIP)和异构集成。这些先进技术的表征和失效分析对于高产可靠产品的整体开发和交付至关重要。
新封装架构引入了深埋在多层之下的新型缺陷,为整个失效分析工作流带来了挑战——无论是电气表征、物理分析还是根本原因的确定。传统的用于对深埋特征进行高分辨率封装分析的工作流缺乏理解问题所需的速度、分辨率和三维信息组合。
异构集成封装的三维无损断层扫描
![异构封装的三维X射线图 异构封装的三维X射线图]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg"})
异构封装的三维X射线图
![异构封装的三维X射线图 异构封装的三维X射线图]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.75.file/heterogeneous-package-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.270.file/heterogeneous-package-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.576.file/heterogeneous-package-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.769.file/heterogeneous-package-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.961.file/heterogeneous-package-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1081.file/heterogeneous-package-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original./heterogeneous-package-3d-xrm.jpg"})
异构集成封装的三维分析
三维X射线显微镜重构突出显示了连接多个芯片的互连桥。
75 µm C4凸块和30 µm微凸块清晰可见。
使用蔡司Xradia Versa X射线显微镜成像
![微凸块的虚拟截面 微凸块的虚拟截面]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1439.1439.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1439.1439.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg"})
微凸块的虚拟截面
![微凸块的虚拟截面 微凸块的虚拟截面]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.75.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.270.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.576.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.769.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.961.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1081.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original./heterogeneous-package-microbumps-cross-section-3d-xrm.jpg"})
微凸块的虚拟截面
来自同一分析的虚拟截面,突出显示了30 µm微凸块,以0.8 µm/体素的分辨率成像。
使用蔡司Xradia Versa X射线显微镜成像
![C4凸块的虚拟截面 C4凸块的虚拟截面]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg"})
C4凸块的虚拟截面
![C4凸块的虚拟截面 C4凸块的虚拟截面]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.75.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.270.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.576.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.768.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.960.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original./heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg"})
C4凸块的虚拟截面
来自同一分析的虚拟截面,突出显示了75 μm C4凸块,以0.8 µm/体素的分辨率成像。
使用蔡司Xradia Versa X射线显微镜成像
智能手机主板的纳米级三维X射线成像
![智能手机主控板的三维X射线图 智能手机主控板的三维X射线图]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.file/smartphone-package-on-package-3d-x-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.file/smartphone-package-on-package-3d-x-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.file/smartphone-package-on-package-3d-x-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/smartphone-package-on-package-3d-x-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/smartphone-package-on-package-3d-x-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/smartphone-package-on-package-3d-x-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original./smartphone-package-on-package-3d-x-xrm.jpg"})
智能手机主控板的三维X射线图
![智能手机主控板的三维X射线图 智能手机主控板的三维X射线图]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.file/smartphone-package-on-package-3d-x-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.file/smartphone-package-on-package-3d-x-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.file/smartphone-package-on-package-3d-x-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/smartphone-package-on-package-3d-x-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/smartphone-package-on-package-3d-x-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/smartphone-package-on-package-3d-x-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original./smartphone-package-on-package-3d-x-xrm.jpg"})
完整主板的X射线图
智能手机主控制板层叠封装(POP)的大观察视野三维X射线扫描图,以10 µm/体素的分辨率成像。
使用蔡司Xradia Context microCT成像
![智能手机主控板中的焊球 智能手机主控板中的焊球]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.file/smartphone-control-board-solder-balls-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.file/smartphone-control-board-solder-balls-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.file/smartphone-control-board-solder-balls-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/smartphone-control-board-solder-balls-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/smartphone-control-board-solder-balls-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/smartphone-control-board-solder-balls-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original./smartphone-control-board-solder-balls-3d-xrm.jpg"})
智能手机主控板中的焊球
![智能手机主控板中的焊球 智能手机主控板中的焊球]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.file/smartphone-control-board-solder-balls-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.file/smartphone-control-board-solder-balls-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.file/smartphone-control-board-solder-balls-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/smartphone-control-board-solder-balls-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/smartphone-control-board-solder-balls-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/smartphone-control-board-solder-balls-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original./smartphone-control-board-solder-balls-3d-xrm.jpg"})
焊球的虚拟截面
来自同一分析的虚拟截面,显示了将仿生芯片连接到主基材的焊球,以10 µm/体素的分辨率成像。
使用蔡司Xradia Context microCT成像
![智能手机主控板中的焊料凸块 智能手机主控板中的焊料凸块]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original./smartphone-control-board-solder-bumps-3d-xrm.jpg"})
智能手机主控板中的焊料凸块
![智能手机主控板中的焊料凸块 智能手机主控板中的焊料凸块]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original./smartphone-control-board-solder-bumps-3d-xrm.jpg"})
焊料凸块的虚拟切片
同一样品中不同层的虚拟截面,显示了将3D NAND闪存芯片连接到主基材的焊料凸块,以10 µm/体素的分辨率成像。
使用蔡司Xradia Context microCT成像
![三维封装互连 三维封装互连]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.100.75.file/buried-microbumps-and-beol-laserfib.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.360.270.file/buried-microbumps-and-beol-laserfib.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.768.576.file/buried-microbumps-and-beol-laserfib.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.1024.768.file/buried-microbumps-and-beol-laserfib.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.1280.960.file/buried-microbumps-and-beol-laserfib.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/buried-microbumps-and-beol-laserfib.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original./buried-microbumps-and-beol-laserfib.jpg"})
三维封装互连
![三维封装互连 三维封装互连]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.100.75.file/buried-microbumps-and-beol-laserfib.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.360.270.file/buried-microbumps-and-beol-laserfib.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.768.576.file/buried-microbumps-and-beol-laserfib.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.1024.768.file/buried-microbumps-and-beol-laserfib.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.1280.960.file/buried-microbumps-and-beol-laserfib.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/buried-microbumps-and-beol-laserfib.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original./buried-microbumps-and-beol-laserfib.jpg"})
快速分析深埋的三维封装互连
Crossbeam laser FIB-SEM可快速提供三维集成电路(IC)封装中直径为25 μm的铜柱微凸块及埋入860 µm深的BEOL结构的高质量截面,获得结果的总时间不到1小时。左:使用激光烧蚀和FIB抛光制备的三维集成电路。右:微凸块的背散射电子图像。
![2.5D封装互连的大观察视野 2.5D封装互连的大观察视野]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.100.75.file/extreme-fov-package-interconnects-fe-sem.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.360.270.file/extreme-fov-package-interconnects-fe-sem.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.768.576.file/extreme-fov-package-interconnects-fe-sem.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.1024.768.file/extreme-fov-package-interconnects-fe-sem.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.1280.960.file/extreme-fov-package-interconnects-fe-sem.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/extreme-fov-package-interconnects-fe-sem.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original./extreme-fov-package-interconnects-fe-sem.jpg"})
2.5D封装互连的大观察视野
![2.5D封装互连的大观察视野 2.5D封装互连的大观察视野]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.100.75.file/extreme-fov-package-interconnects-fe-sem.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.360.270.file/extreme-fov-package-interconnects-fe-sem.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.768.576.file/extreme-fov-package-interconnects-fe-sem.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.1024.768.file/extreme-fov-package-interconnects-fe-sem.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.1280.960.file/extreme-fov-package-interconnects-fe-sem.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/extreme-fov-package-interconnects-fe-sem.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original./extreme-fov-package-interconnects-fe-sem.jpg"})
2.5D封装互连的高分辨率超大观察视野成像
GeminiSEM FE-SEM具备无失真、大观察视野成像功能,能够对封装和BEOL结构进行高效分析,从而提高其生产率。
插入图:2.5D封装截面的特写图,显示了20 µm微凸块中的晶粒结构和焊料裂纹。
![焊料凸块中的金属间层 焊料凸块中的金属间层]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.100.75.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.360.270.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.768.576.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.1024.768.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.1280.960.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original./solder-bump-intermetallic-layer-imaging-fe-sem.jpg"})
焊料凸块中的金属间层
![焊料凸块中的金属间层 焊料凸块中的金属间层]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.100.75.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.360.270.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.768.576.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.1024.768.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.1280.960.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original./solder-bump-intermetallic-layer-imaging-fe-sem.jpg"})
焊料凸块金属间层分析
倒装芯片焊料凸块的截面显示了材料成分衬度、晶粒结构的沟道对比和附着力。
插入图:UBM RDL界面处失效。
使用GeminiSEM FE-SEM成像