![逻辑和存储]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original.image_file.100.100.file/advanced-semiconductor-packaging-microscopy-solutions.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original.image_file.360.360.file/advanced-semiconductor-packaging-microscopy-solutions.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original.image_file.768.768.file/advanced-semiconductor-packaging-microscopy-solutions.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/advanced-semiconductor-packaging-microscopy-solutions.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original./advanced-semiconductor-packaging-microscopy-solutions.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original./advanced-semiconductor-packaging-microscopy-solutions.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original./advanced-semiconductor-packaging-microscopy-solutions.jpg"} "逻辑和存储")
先进的封装和三维异构集成
通过亚微米成像和分析提高生产率
对于当今的半导体器件，单靠晶体管缩放已不足以提高性能并实现系统小型化。半导体封装的创新，例如使用硅通孔（TSV）的新型2.5D/3D设计和使用混合键合的小芯片，可实现系统级封装（SIP）和异构集成。这些先进技术的表征和失效分析对于高产可靠产品的整体开发和交付至关重要。
新封装架构引入了深埋在多层之下的新型缺陷，为整个失效分析工作流带来了挑战——无论是电气表征、物理分析还是根本原因的确定。传统的用于对深埋特征进行高分辨率封装分析的工作流缺乏理解问题所需的速度、分辨率和三维信息组合。
异构集成封装的三维无损断层扫描
![异构封装的三维X射线图]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg"} "异构封装的三维X射线图")
异构封装的三维X射线图
![异构封装的三维X射线图]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.75.file/heterogeneous-package-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.270.file/heterogeneous-package-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.576.file/heterogeneous-package-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.769.file/heterogeneous-package-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.961.file/heterogeneous-package-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1081.file/heterogeneous-package-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original./heterogeneous-package-3d-xrm.jpg"} "异构封装的三维X射线图")
异构集成封装的三维分析
三维X射线显微镜重构突出显示了连接多个芯片的互连桥。
75 µm C4凸块和30 µm微凸块清晰可见。
使用蔡司Xradia Versa X射线显微镜成像
![微凸块的虚拟截面]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1439.1439.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1439.1439.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg"} "微凸块的虚拟截面")
微凸块的虚拟截面
![微凸块的虚拟截面]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.75.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.270.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.576.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.769.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.961.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1081.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original./heterogeneous-package-microbumps-cross-section-3d-xrm.jpg"} "微凸块的虚拟截面")
微凸块的虚拟截面
来自同一分析的虚拟截面，突出显示了30 µm微凸块，以0.8 µm/体素的分辨率成像。
使用蔡司Xradia Versa X射线显微镜成像
![C4凸块的虚拟截面]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg"} "C4凸块的虚拟截面")
C4凸块的虚拟截面
![C4凸块的虚拟截面]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.75.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.270.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.576.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.768.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.960.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original./heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg"} "C4凸块的虚拟截面")
C4凸块的虚拟截面
来自同一分析的虚拟截面，突出显示了75 μm C4凸块，以0.8 µm/体素的分辨率成像。
使用蔡司Xradia Versa X射线显微镜成像
智能手机主板的纳米级三维X射线成像
![智能手机主控板的三维X射线图]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.file/smartphone-package-on-package-3d-x-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.file/smartphone-package-on-package-3d-x-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.file/smartphone-package-on-package-3d-x-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/smartphone-package-on-package-3d-x-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/smartphone-package-on-package-3d-x-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/smartphone-package-on-package-3d-x-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original./smartphone-package-on-package-3d-x-xrm.jpg"} "智能手机主控板的三维X射线图")
智能手机主控板的三维X射线图
完整主板的X射线图
智能手机主控制板层叠封装（POP）的大观察视野三维X射线扫描图，以10 µm/体素的分辨率成像。
使用蔡司Xradia Context microCT成像
![智能手机主控板中的焊球]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.file/smartphone-control-board-solder-balls-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.file/smartphone-control-board-solder-balls-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.file/smartphone-control-board-solder-balls-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/smartphone-control-board-solder-balls-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/smartphone-control-board-solder-balls-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/smartphone-control-board-solder-balls-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original./smartphone-control-board-solder-balls-3d-xrm.jpg"} "智能手机主控板中的焊球")
智能手机主控板中的焊球
焊球的虚拟截面
来自同一分析的虚拟截面，显示了将仿生芯片连接到主基材的焊球，以10 µm/体素的分辨率成像。
使用蔡司Xradia Context microCT成像
![智能手机主控板中的焊料凸块]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original./smartphone-control-board-solder-bumps-3d-xrm.jpg"} "智能手机主控板中的焊料凸块")
智能手机主控板中的焊料凸块
焊料凸块的虚拟切片
同一样品中不同层的虚拟截面，显示了将3D NAND闪存芯片连接到主基材的焊料凸块，以10 µm/体素的分辨率成像。
使用蔡司Xradia Context microCT成像
![三维封装互连]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.100.75.file/buried-microbumps-and-beol-laserfib.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.360.270.file/buried-microbumps-and-beol-laserfib.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.768.576.file/buried-microbumps-and-beol-laserfib.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.1024.768.file/buried-microbumps-and-beol-laserfib.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.1280.960.file/buried-microbumps-and-beol-laserfib.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/buried-microbumps-and-beol-laserfib.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original./buried-microbumps-and-beol-laserfib.jpg"} "三维封装互连")
三维封装互连
快速分析深埋的三维封装互连
Crossbeam laser FIB-SEM可快速提供三维集成电路（IC）封装中直径为25 μm的铜柱微凸块及埋入860 µm深的BEOL结构的高质量截面，获得结果的总时间不到1小时。左：使用激光烧蚀和FIB抛光制备的三维集成电路。右：微凸块的背散射电子图像。
![2.5D封装互连的大观察视野]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.100.75.file/extreme-fov-package-interconnects-fe-sem.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.360.270.file/extreme-fov-package-interconnects-fe-sem.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.768.576.file/extreme-fov-package-interconnects-fe-sem.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.1024.768.file/extreme-fov-package-interconnects-fe-sem.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.1280.960.file/extreme-fov-package-interconnects-fe-sem.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/extreme-fov-package-interconnects-fe-sem.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original./extreme-fov-package-interconnects-fe-sem.jpg"} "2.5D封装互连的大观察视野")
2.5D封装互连的大观察视野
2.5D封装互连的高分辨率超大观察视野成像
GeminiSEM FE-SEM具备无失真、大观察视野成像功能，能够对封装和BEOL结构进行高效分析，从而提高其生产率。
插入图：2.5D封装截面的特写图，显示了20 µm微凸块中的晶粒结构和焊料裂纹。
![焊料凸块中的金属间层]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.100.75.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.360.270.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.768.576.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.1024.768.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.1280.960.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original./solder-bump-intermetallic-layer-imaging-fe-sem.jpg"} "焊料凸块中的金属间层")
焊料凸块中的金属间层
焊料凸块金属间层分析
倒装芯片焊料凸块的截面显示了材料成分衬度、晶粒结构的沟道对比和附着力。
插入图：UBM RDL界面处失效。
使用GeminiSEM FE-SEM成像
![蔡司Crossbeam——专为高效率三维分析和样品制备量身打造的FIB-SEM]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550-system.jpg/_jcr_content/renditions/original.image_file.100.100.file/crossbeam-550-system.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550-system.jpg/_jcr_content/renditions/original.image_file.360.360.file/crossbeam-550-system.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550-system.jpg/_jcr_content/renditions/original.image_file.768.768.file/crossbeam-550-system.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550-system.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/crossbeam-550-system.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550-system.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/crossbeam-550-system.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550-system.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/crossbeam-550-system.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550-system.jpg/_jcr_content/renditions/original./crossbeam-550-system.jpg"} "蔡司Crossbeam")
![蔡司GeminiSEM系列]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/sem/geminisem/zeiss_gemini-sem-stage.jpg/_jcr_content/renditions/original.image_file.100.100.285,86,1638,1439.file/zeiss_gemini-sem-stage.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/sem/geminisem/zeiss_gemini-sem-stage.jpg/_jcr_content/renditions/original.image_file.360.360.285,86,1638,1439.file/zeiss_gemini-sem-stage.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/sem/geminisem/zeiss_gemini-sem-stage.jpg/_jcr_content/renditions/original.image_file.768.768.285,86,1638,1439.file/zeiss_gemini-sem-stage.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/sem/geminisem/zeiss_gemini-sem-stage.jpg/_jcr_content/renditions/original.image_file.1024.1024.285,86,1638,1439.file/zeiss_gemini-sem-stage.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/sem/geminisem/zeiss_gemini-sem-stage.jpg/_jcr_content/renditions/original.image_file.1280.1280.285,86,1638,1439.file/zeiss_gemini-sem-stage.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/sem/geminisem/zeiss_gemini-sem-stage.jpg/_jcr_content/renditions/original.image_file.1353.1353.285,86,1638,1439.file/zeiss_gemini-sem-stage.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/sem/geminisem/zeiss_gemini-sem-stage.jpg/_jcr_content/renditions/original.image_file.1353.1353.285,86,1638,1439.file/zeiss_gemini-sem-stage.jpg"} "蔡司GeminiSEM系列")
![蔡司Xradia Context microCT]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-context-microct/context_product.jpg/_jcr_content/renditions/original.image_file.100.100.420,0,1500,1080.file/context_product.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-context-microct/context_product.jpg/_jcr_content/renditions/original.image_file.360.360.420,0,1500,1080.file/context_product.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-context-microct/context_product.jpg/_jcr_content/renditions/original.image_file.768.768.420,0,1500,1080.file/context_product.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-context-microct/context_product.jpg/_jcr_content/renditions/original.image_file.1024.1024.420,0,1500,1080.file/context_product.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-context-microct/context_product.jpg/_jcr_content/renditions/original.image_file.1080.1080.420,0,1500,1080.file/context_product.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-context-microct/context_product.jpg/_jcr_content/renditions/original.image_file.1080.1080.420,0,1500,1080.file/context_product.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-context-microct/context_product.jpg/_jcr_content/renditions/original.image_file.1080.1080.420,0,1500,1080.file/context_product.jpg"} "蔡司Xradia Context microCT")
![蔡司VersaXRM 730]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-versa/versaxrm-730/versaxrm_730_zen-navx.jpg/_jcr_content/renditions/original.image_file.100.100.26,26,916,916.file/versaxrm_730_zen-navx.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-versa/versaxrm-730/versaxrm_730_zen-navx.jpg/_jcr_content/renditions/original.image_file.360.360.26,26,916,916.file/versaxrm_730_zen-navx.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-versa/versaxrm-730/versaxrm_730_zen-navx.jpg/_jcr_content/renditions/original.image_file.768.768.26,26,916,916.file/versaxrm_730_zen-navx.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-versa/versaxrm-730/versaxrm_730_zen-navx.jpg/_jcr_content/renditions/original.image_file.890.890.26,26,916,916.file/versaxrm_730_zen-navx.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-versa/versaxrm-730/versaxrm_730_zen-navx.jpg/_jcr_content/renditions/original.image_file.890.890.26,26,916,916.file/versaxrm_730_zen-navx.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-versa/versaxrm-730/versaxrm_730_zen-navx.jpg/_jcr_content/renditions/original.image_file.890.890.26,26,916,916.file/versaxrm_730_zen-navx.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-versa/versaxrm-730/versaxrm_730_zen-navx.jpg/_jcr_content/renditions/original.image_file.890.890.26,26,916,916.file/versaxrm_730_zen-navx.jpg"} "蔡司VersaXRM 730")
![ZEISS GeminiSEM FE-SEM Family的预览图像]({"max":"https://asset-downloads.zeiss.com/catalogs/preview/mic/18b5c231-1928-41a6-bd0c-04faed5d5b1c/EN_product-flyer_GeminiSEM-for-semiconductor_A4_PRINT.pdf.jpg"} "下载ZEISS GeminiSEM FE-SEM Family")
![ZEISS Xradia Context microCT的预览图像]({"max":"https://asset-downloads.zeiss.com/catalogs/preview/mic/e1f4d96d-a173-4137-b249-ca7baf5d195f/EN_product-flyer_Xradia-Context-for-semiconductor.pdf.jpg"} "下载ZEISS Xradia Context microCT")
![Hitting Defects Accurately Through Correlation的预览图像]({"max":"https://asset-downloads.zeiss.com/catalogs/preview/mic/99e43882-cdcf-4dc5-9eeb-d9e506c2aa97/EN_wp_Cut2ROI-2.pdf.jpg"} "下载Hitting Defects Accurately Through Correlation")
![Flyer: ZEISS DeepRecon Pro for Electronics and Failure Analysis的预览图像]({"max":"https://asset-downloads.zeiss.com/catalogs/preview/mic/b681f941-40ec-4f59-b8ba-06310c83a7b6/EN_product-flyer_DeepRecon-Pro-semiconductor-electronics_US.pdf.jpg"} "下载Flyer: ZEISS DeepRecon Pro for Electronics and Failure Analysis")
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